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Professor Dae Hyeong KIM Develops Wearable Silicon Memory Array

  • January 2, 2016
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Wearable silicon memory chip
Wearable silicon memory chip

Professor Dae Hyeong Kim’s research team (Center for Nanoparticle Research, Institute for Basic Science) has developed a wearable, fully multiplexed silicon memory array with nanocrystal floating gates. The team assembled gold nanoparticle floating gates over silicon nanomembranes using the Langmuir-Blodgett method. Floating gates assembled using the Langmuir-Blodgett method have a large memory window and high cell-to-cell uniformity. This enables wearable healthcare applications such as long-term data storage of monitored heart rates. The team experimentally confirmed particle-level charge confinement without charge delocalization in closely packed gold nanoparticles. This affords the long retention time of memory devices. This development was published online in Science Advances on January 1.

Summary by LEE Hee Un, SNU English Editor, gurume0221@snu.ac.kr
Proofread by Melora Brett Briana Johnson, morningcalm2@gmail.com

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